GaN-Based heterojunction structures for ultraviolet/infrared dual-band detection

Ultraviolet and infrared (UV/IR) dual-band photodetectors based on GaN/AlGaN heterojunction structures are presented. Since the UV/IR dual-band detectors do not respond to solar radiation or another artificial visible lighting, these detectors are highly applicable for tracking and surveillance of targets. A dual-band detector which simultaneously detects UV in the 250 - 360 nm and IR in the 3 - 14 mum regions, showing a near zero spectral crosstalk between the two spectral bands, is discussed. A UV/IR detector design to further improve the detection capabilities is also reported.