Inversion-type surface channel In0.53]Ga{in0.47As metal-oxide-semiconductor field-effect transistors with metal-gate/high-k dielectric stack and CMOS-compatible PdGe contacts

We report the first demonstration of a surface channel inversion-type In
_0.53
Ga
_0.47
As n-MOSFET featuring gold-free palladium-germanium (PdGe) ohmic contacts and self-aligned S/D formed by silicon and phosphorus co-implantation. A gate stack comprising TaN/HfAlO/In
_0.53
Ga
_0.47
As is also featured. Excellent transistor output characteristics with high drain current on/off ratio of 10
⁴
, high peak electron mobility of 1420 cm
²
/Vs and peak transconductance of 142 mS/mm at gate length of 2 mum were demonstrated. In addition, the integration of low resistance PdGe ohmic contacts on In
_0.53
Ga
_0.47
As alleviates contamination concerns associated with the common use of gold-based contacts on In
_0.53
Ga
_0.47
As.