22nm CMOS approaches by PVD TiN or Ti-Silicide as metal gate

Two SMSD gate first planar CMOS devices were demonstrated. Vtn/Vtp= +0.49V/-0.48V were achieved by adjusting TiN to p-like metal and As I/I on nMOS. This enables the equivalent +/-0.2V low Vt target of N22 fully depleted CMOS technologies. Vtn/Vtp= 0.52/-0.55 were obtained by transforming PVD-TiN/Ti into n-like metal TiN/TiSix for nMOS and by Al I/I on TiN/Ti for pMOS. Al diffusion was facilitated by snowplow effect of TiSix formation on pMOS. As low as 7.3A EOT with decent Jg 6.4E-3 A/cm
²
@ 1.1Vwas obtained.