Performance of a trench pmos gated, planar, 1.2 kV Clustered insulated gate bipolar transistor in NPT technology

The conventional Clustered IGBT is a MOS controlled power device with controlled thyristor action, which has been demonstrated to show lower V
ce
(sat) compared to IGBT, current saturation characteristics at high gate voltages and short circuit performance. In this paper, we show that, with the incorporation additional PMOS trench gates in a normally planar gate structure, the performance of the device can be enhanced even further to tailor saturation current levels and hence improve short-circuit performance without degrading V
ce
(sat). This is evaluatated using 1.2kV planar NPT CIGBT through extensive 2D simulations. This is the first paper to demonstrate a simple mechanism to control the saturation current without degrading V
ce
(sat) and other characteristics.