730V, 34mΩ-cm2 lateral epilayer RESURF GaN MOSFET

We report on the experimental demonstration of a novel n-channel GaN epilayer RESURF GaN MOSFET with good trade-off between breakdown voltage and specific on-resistance for the first time. Device with 4 mum channel length and 16 mum RESURF length has breakdown voltage up to 730 V with specific on-resistance 34 mOmega-cm
²
(V
_G
-V
_T
=20 V).