Enhancement-mode GaN hybrid MOS-HFETs on Si substrates with Over 70 A operation

We report on the demonstration of enhancement-mode n-channel GaN-based hybrid MOS-HFETs realized on AlGaN/GaN heterostructure on silicon substrates with a large drain current operation. The GaN-based hybrid MOS HFETs realized the threshold voltage of 2.8 V, the maximum drain current of over 70 A with the channel width of 340 mm. This is the best value for an enhancement-mode GaN-based FET. The specific on-state resistance was 16.5 mΩcm
²
. The breakdown voltage was over 500 V. These results suggest that this structure is a good candidate for power switching applications.