Gate oxide breakdown model in MOS transistors

Post MOS transistor gate oxide breakdown forms a phosphorous diffusion path in the gate oxide. This diffusion path originates from the phosphorous doped polysilicon gate. A model is presented based on SIMS analysis, electrical characterization and SPICE simulations, The model explains the contradicting temperature dependent leakage current for a device with gate oxide breakdown. This leakage exhibits either resistive- or diode-like behavior depending on breakdown site.