A low cost and low power silicon npn bipolar process with NMOS transistors and its wireless applications

Microwave and dc characteristics, and wireless applications of a low cost and low power silicon bipolar process with NMOS transistors are described. The process features 25-GHz double-polysilicon self-aligned npn bipolar transistors with 5.5-V BV/sub CEO/, optional 0.7-/spl mu/m NMOS transistors with p/sup +/ polysilicon gate for switch applications, lateral pnp transistors, high and low valued resistors, inductors, and p/sup +/ polysilicon-to-n/sup +/ plug capacitors. The RF and microwave capabilities of the process up to several GHz are demonstrated by fabricating and characterizing RF amplifiers, low noise amplifiers, and RF switches.