An inductor-coupling resonated CMOS low noise amplifier for 3.1–10.6GHz ultra-wideband system

In this paper, a low power low-noise amplifier (LNA) using inductor-coupling resonated technique is designed for ultra-wideband (UWB) wireless system. The design consists of a wideband input impedance matching network, one stage cascode amplifier with inductor-coupling resonated load, and an output buffer; it was fabricated in TSMC 0.18 um standard RF CMOS process. The UWB LNA gives 10.8 dB power gain and 9.4 GHz 3 dB bandwidth (1.2 GHz - 10.6 GHz) while consuming only 6.2 mW through a 1.2 V supply, including output buffer. Over the 3.1 GHz - 10.6 GHz frequency band, a minimum noise figure of 3.9 dB and input return loss lower than -5.7 dB have been achieved.