GHz on-silicon-wafer probing calibration methods

Three calibration/correction techniques for on-silicon-wafer S-parameter measurements to 18 GHz were assessed by comparing calibration standards on sapphire and silicon. The effect of these techniques was evaluated by measuring large and small devices, connected to large and small pads. Equivalent circuit models for the calibration standards on silicon are presented. In addition, a new technique for on-wafer S-parameter measurements of backside collector devices is presented.<
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