Heteroface bipolar transistor based on bandgap narrowing in p/sup +/-GaAs

A n-p-n bipolar transistor that will be comparable in performance to conventional heterostructure bipolar transistors, but will be far easier to manufacture, is described. The device features an n-GaAs:p/sup +/-GaAs emitter-base junction and makes use of bandgap shrinkage in the p/sup +/-GaAs to maintain high emitter injection efficiency. Measurements of bandgap shrinkage in p/sup +/-GaAs are reviewed. The DC performance of the new device, in terms of the current gain, is expected to be excellent.<
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