A study on edge termination technique at low temperature for high voltage IGBT

By a simulation study and advanced process technologies, the edge termination structure has been modified for a high power electronic industrial applications and traction. In the rail traction application, the power devices may be subjected to both high voltage and high current at a relative low ambient temperature. In this field, a specified maximum blocking voltage is strongly requested even at the low ambient temperature of -40/spl deg/C. The temperature dependence of the blocking voltage is strongly dependent on the edge termination structure. We developed a high voltage IGBT having a lower temperature dependence of the blocking voltage, which has an edge termination with a semi-resistive film over field limiting rings with the offset field plates. This technology will spread the application field of IGBT toward higher voltages and more demanding operating conditions.