Self-enclosed vs. LOPOS-terminated lateral planar p/sup +/n and n/sup +/p junctions in 3C-SiC/Si

Lateral p/sup +/n and n/sup +/p diodes in 3C-SiC/Si, with different isolation terminations, have been compared at both room and elevated temperatures, up to 250/spl deg/C. The ion-implanted, planar diodes have been demonstrated with leakage currents as low as 2.65/spl times/10/sup -6/ A/cm/sup 2/ at room temperature, the lowest known for 3C-SiC. The forward drop for N-implanted junctions is found to be tightly distributed at 1.6-1.7 V, and that for Al-implanted diodes around 1.7-1.9 V. The ideality factor for the diodes is found to lie between 1.8 and 2.5. The N-implanted diodes show better reverse leakage characteristics than the Al-implanted junctions, with almost an order of magnitude lower leakage current. Two different termination schemes, self-enclosed vs. LOPOS-terminated, have been compared for the two diodes. Specific contact resistivity, as low as 1/spl times/10/sup -7/ /spl Omega/-cm/sup 2/ is obtained for ohmic contacts to the implanted regions.