Quantum Transport Simulations of InGaAs HEMTs: Influence of Mass Variations on the Device Performance

This paper presents a simulation work of In
_0.7
Ga
_0.3
As HEMT devices for logic applications using a quantum ballistic 2D simulator based on the non-equilibrium Green's function (NEGF) approach coupled to a 2D Poisson for the electrostatics. In a previous study, we showed that In
_0.7
Ga
_0.3
As short channel HEMT devices operates close to the ballistic limit and can be modeled as a ballistic channel attached to two series resistances. Since the electronic structure of the quantized channel is not known precisely, or can be altered by strain fields, in this work, we quantify our results, by investigating the variation in device performance due to variations in the effective mass values. We conclude that for these devices, variations in the electronic structure do not impact the device performance significantly. The results also provide insight into the expected effect of strain on the performance due to mass variations.