Performance Analysis of Graphene Bilayer Transistors Through Tight-Binding Simulations

A simulation study of a tunable-gap bilayer graphene FET with independent gates is performed with a numerical solver based on the self-consistent solution of the Poisson and Schrodinger equations within the NEGF formalism. The applied vertical field manages to induce an energy gap, but its value is not large enough to suppress band-to-band tunneling and to obtain acceptable I
_ON
/I
_OFF
ratio for CMOS device operation.