Ultra-shallow in-situ-doped raised source/drain structure for sub-tenth micron CMOS

A new raised source/drain (RSD) structure is proposed, which combines facet controlled in-situ-doped selective Si epitaxial growth (SEG) and solid-phase diffusion (SPD). This can provide ultra-shallow junctions without sacrificing the parasitic resistance or capacitance. 0.1 /spl mu/m pMOSFETs with 20 nm deep junctions exhibiting excellent electrical characteristics and reliability were demonstrated. CMOS process compatibility was also confirmed.