High-frequency characteristics and its dependence on parasitic components in 0.1 /spl mu/m Si-MOSFETs

High-frequency characteristics of 0.1 /spl mu/m Si-MOSFETs are evaluated and the influence of parasitic components on f/sub MAX/ are analyzed. It was found that reductions of both the gate resistance and junction capacitance are essential to achieve high microwave performance. By using a tungsten polycide electrode and a local channel implant technique, a f/sub T/ value of 63 GHz for NMOS and 33 GHz for PMOS were obtained with 0.12 /spl mu/m CMOS. f/sub MAX/>f/sub T/ condition was satisfied for L>0.15 /spl mu/m. When a lower resistivity gate electrode, such as titanium silicide, is adopted, f/sub MAX/>f/sub T/ can be easily obtained in 0.1 /spl mu/m CMOS. These results demonstrate that 0.1 /spl mu/m CMOS will be a good candidate for future high-performance and low-cost microwave LSIs.