Novel salicide technology using Ti hydrogenation for 0.1 /spl mu/m CMOS

A novel titanium self-aligned silicide (Ti salicide) process has been developed that uses in situ rapid thermal hydrogenation (RTH) of the Ti prior to rapid thermal annealing (RTA) to achieve 0.1-/spl mu/m CMOS. The in situ RTH enhances the silicidation reaction and reduces the nitridation reaction of the Ti. A low C54-TiSi/sub 2/ sheet resistance of 11.7 /spl Omega///spl square/ was obtained at a 0.1-/spl mu/m line width with 15-nm-thick deposited Ti.