Design of a novel sensor based on piezo-resistive effect of GaAs/AlGaAs/InGaAs PHEMT

A novel nano electro mechanical system (NEMS) accelerated sensor was presented in this paper. The accelerated sensor is based on piezo-resistive effect of GaAs/AlAs/InGaAs pseudomorph-high electron mobility transistor (PHEMT). Piezo-resistive effect of field effect transistor (FET) is analyzed, the structure of the sensor and its sensitive element are designed, and process is introduced. Abecedarian test is performed, and the test result shows that this NEMS accelerated sensor could sense exterior stress well.