Quantum Well and Dot Self-Aligned Stripe Lasers Utilizing an InGaP Optoelectronic Confinement Layer

We demonstrate and study a novel process for fabrication of GaAs-based self-aligned lasers based upon a single overgrowth. A lattice-matched n-doped InGaP layer is utilized for both electrical and optical confinements. Single-lateral-mode emission is demonstrated initially from an In
_0.17
Ga
_0.83
As double quantum well laser emitting ~980 nm. We then apply the fabrication technique to a quantum dot laser emitting ~1300 nm. Furthermore, we analyze the breakdown mechanism in our devices and discuss the limitations of index guiding in our structures.