Design of MOS-gated bipolar transistors with integral antiparallel diode

This paper discusses the design of a new power switching device with integral antiparallel diode called MOS gated bipolar transistor (MGBT). The upper region of the MGBT device structure is conductivity-modulated by a positive feedback mechanism to give a lower on-state voltage drop as compared to a power MOSFET while having fast switching and fully MOS-gate controlled characteristics. A comprehensive model for the MGBT is developed and simple analytical equations are used to predict the on-state characteristics of the MGBT. The analytical modeling results are in good agreement with experimental results on fabricated 750 V MGBT devices. The experimentally measured characteristics of the integral antiparallel diode in the MGBT are reported for the first time in this paper.