Analytical model of the kink effect related to interface traps in In/sub 0.52/Al/sub 0.48/As/In/sub x/Ga/sub 1-x/As MODFETs (x>0.53)

A new analytical model is derived for the kink effect in strained and unstrained InAlAs/InGaAs MODFET's. The influence of heterointerface traps on the kink effect in MODFET's is considered by the change of threshold voltage. The origin of the kink effect in MODFET's is analyzed carefully, and the influence of strain is discussed.