Improved analog hot-carrier immunity for CMOS mixed-signal applications with LATID technology

This paper reports the results of an investigation of hot-carrier effects on analog performance in LATID (Large-Angle-Tilt-Implanted-Drain) and conventional LDD submicron CMOS technology. The investigation focuses on hot-carrier induced degradation of voltage gain, degradation of drain output resistance, and drift of offset voltage of differential pairs. Results illustrate that LATID technology significantly out-performs LDD technology in regard to hot-carrier immunity of key analog parameters in short channel length devices as well as in relatively long channel length devices. The improvement of analog hot-carrier immunity with LATID is attributed to the mechanisms of reduction and departure of high electrical field from the drain area. Results suggest that LATID technology is a promising candidate for mixed-signal ULSI applications.