Modeling noise correlation behavior in dual-collector magnetotransistors using small signal equivalent circuit analysis

We present a distributed small signal equivalent circuit model based on hybrid-/spl pi/ for modeling of the low-frequency noise correlation behavior in dual-collector magnetotransistors (MTs). The model is based on the assumption that the noise sources at the emitter-base junction of the transistor are spatially correlated; the degree of spatial correlation in noise sources being limited by the intrinsic base spreading resistance. This gives rise to a degradation in correlation of terminal collector noise currents at high current, or injection, levels due to nonuniformities in the dc bias current distribution.