Investigation of optical losses in photoelastic and ridge waveguides in GaAs-AlGaAs heterostructures

Two approaches have been used to fabricate stable photoelastic waveguides with planarized surfaces on GaAs-AlGaAs heterostructures. The first approach uses tensile Ni
₃
GaAs stressors formed by metal-semiconductor reactions. The second approach uses inert, refractory and compressive stressors, such as RF sputtered W and RF co-sputtered WNi films. For comparison purposes, ridge waveguides have also been fabricated using the same heterostructure by a dry etching technique. Optical losses of photoelastic waveguides, measured by Fabry-Perot (FP) method at a wavelength of 1.53 μm, are comparable to or better than those of the ridge waveguides. Material loss appears to be the primary loss mechanism in both photoelastic and ridge waveguides. These results indicate that the photoelastic waveguide processing technique reported in this study is a promising alternative to commonly used dry etching techniques for planarization.