Metal-oxide-HEMT on 6.1Å antimonides

We successfully demonstrated DC and RF performance of a metal-oxide-HEMT based on baseline InAs/AlSb HEMT epitaxy material. E-beam evaporated Al
_1-x
O
_x
was chosen for the dielectric film and its composition characterized by EDS. In a device with 2.0 mum gate length, maximum drain current is 286 mA/mm and peak transconductance is 495 mS/mm at drain voltage of 0.4 V. Microwave performance shows a f
_T
of 10 GHz and an f
_max
of 20 GHz. Degraded subthreshold slope but suppressed gate leakage specifically at large electric field were observed.