DC characteristics of InAs/AlSb HEMTs at cryogenic temperatures

The DC properties of 110-nm gate-length InAs/AlSb-based HEMTs at cryogenic (30 K) and room temperature (300 K) have been investigated. Compared to 300K, devices at 30 K exhibited lower on-resistance (R
_ON
) and output conductance (g
_DS
), a higher transconductance (g
_m
) and a more distinct knee in the I
_DS
(V
_DS
) characteristics. The improvement in the DC performance at cryogenic temperature should mainly be attributed to the lower source-drain resistance.