Low dark current SWIR photodiode with InGaAs/GaAsSb Type II quantum wells grown on InP substrate

For sensing short wavelength infrared (SWIR) region (1.0-2.5 mum), photodiodes with In
_0.53
Ga
_0.47
As/GaAs
_0.5
Sb
_0.5
type II quantum well structure grown on InP substrate by solid source molecular beam epitaxy (MBE), were successfully fabricated. Low dark current was obtained by improving GaAsSb crystalline quality.