Nano-electronics of high κ dielectrics on InGaAs for key technologies beyond Si CMOS

The surface Fermi level unpinning in InGaAs has been realized with high κ dielectric growth using molecular beam eitaxy (MBE) and atomic layer deposition (ALD). Furthermore, world-record device performances in self-aligned inversion-channel InGaAs MOSFET and a capacitance equivalent thickness (CET) of ≤ 1 nm in Ga
2
O
3
(Gd
2
O
3
) and ALD-HfO
2
on InGaAs have been achieved.