Properties of high index-contrast wired GaInAsP waveguides with benzocyclobutene on Si substrate

500×150 nm
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GaInAsP wired waveguides were fabricated on a Si substrate by adhesive bonding using benzocyclobutene (BCB). The propagation loss of 2.1 dB/mm and 1.5 µm-radius bending loss of less than 1.0 dB/90° were obtained.