InAs QDs on thin GaP1−xNx buffer on GaP by MOCVD

GaP-based InAs quantum dots (QDs) on a thin GaP
_1-x
N
_x
buffer layer grown by the low-pressure metalorganic chemical vapor deposition were investigated by the atomic force microscopy. The InAs dot density was significantly increased from 2.6 times 10
⁹
cm
^-2
to 2.0 times 10
¹⁰
cm
^-2
with increasing the nitrogen composition of the GaP
_1-x
N
_x
from x = 0 to 4.5. The InAs QDs grown on GaP and GaPN with various InAs supply from 0.7 monolayer (ML) to 2.5 ML was also investigated. The dot density of the InAs QDs on GaPN and GaP buffer layers drastically increased at the InAs supply of 1.0 ML and 1.1 ML, respectively. The InAs dot density was saturated when the InAs supply was more than 1.4 ML.