Plasma immersion ion implantation for ULSI devices

Summary form only given. The plasma immersion ion implantation (PIII) technique shows great promise for large-area and high dose-rate processing of material surfaces. We present results of recent developments of semiconductor applications such as ultrashallow junction formation, conformal doping, preamorphization, selective plating of metals, damage induced impurities gettering, and SIMOX synthesis. Processing requirements and limitations of plasma implantation such as substrate etching oxide charging and plasma-solid interactions are discussed.