Ultra-thin-film silicon-on-insulator structure using oxidized porous silicon

Ultra-thin-film Silicon-On-Insulator (TFSOI) structure with 100 nm-thick and 100 /spl mu/m-wide top Si islands were fabricated using the full isolation by oxidized porous silicon (FIPOS) technique. These structures were characterized using XTEM, ASP, Raman spectroscopy and electrical breakdown measurement. The results indicate that the TFSOI structures are of high quality and the Si islands are fully isolated.