Substantial advantages of fully-depleted CMOS/SIMOX devices as low-power high-performance VLSI components compared with its bulk-CMOS counterpart

The properties of fully-depleted CMOS/SIMOX devices as low-power high-performance VLSI components are presented. When compared with bulk devices the steeper subthreshold slope of the SIMOX device allows one to enhance the performance of multipliers and SRAMs at low supply voltages without increasing the leakage current. The controllability of the threshold voltage statistical spreading and the standby leakage current of SIMOX LSI is also demonstrated.