Simulation of Ge implanted SiGe-channel p-MOSFETs

This paper describes the process feasibility analysis and numerical simulation of Ge implanted SiGe-channel p-MOSFETs. The average separation between conducting holes and SiO/sub 2/-Si interface peaks at certain effective implantation range, implies an optimum mask thickness. Threshold voltage is shown to increase with increasing Ge dose and decreasing effective projected range.