Influence and extraction of series resistances in pseudo-MOS transistors

The pseudo-MOS transistor technique is used for quick evaluation of several types of SOI wafers: SIMOX from different origins and wafer bonding. The effective mobility for electrons and holes, threshold voltages, film doping, interface state density and series resistances are extracted as a function of probe pressure. The paper focuses on new methods for the extraction of series resistances in MOS-transistors. The form factor of the pseudo-MOS is accurately evaluated by comparison with 4-point probe measurement taking into account the correction induced by series resistances.