Simulated anisotropic etching diagrams-examples and properties

A Monte Carlo program and a program based on the formula of the evolution of atom disappearance probabilities were used for the simulation of anisotropic etching of silicon-like crystals. Both programs are based on the assumption that differently bounded atoms at the silicon-etchant interface have specific, parametrizable deletion probabilities. An additional program extracts the local values of the etching rates and represents them in polar diagrams. Due to the limited extent of the considered crystal dots, the obtainable etching diagrams can be multiple valued and may bear specific distortions. Examples for different degrees of anisotropy are presented and discussed.