Photoconductive decay lifetime and Suns-Voc diagnostics of efficient heterojunction solar cells

Minority carrier lifetime and Suns-V
oc
measurements are well-accepted methods for characterization of solar cell devices. We use these methods, with an instrument from Sinton Consulting, as we fabricate and optimize state-of-the-art all hot-wire chemical vapor deposition (HWCVD) silicon heterojunction (SHJ) devices. For double-sided SHJ devices, lifetime measurements were performed immediately after hydrogenated amorphous silicon (a-Si:H) deposition of the front emitter and back base contacts on a Silicon wafer, and also after indium tin oxide (ITO) deposition of transparent conducting oxide contacts. We report results of minority carrier lifetime measurements for double-sided p-type Si heterojunction devices and compare Suns-V
oc
results to Light I–V measurements on 1-cm
²
solar cell devices measured on an AM1.5 calibrated XT-10 solar simulator.