MOCVD regrowth of InP on RIE patterned substrates for p-substrate 1.3 /spl mu/m BH laser application

We have investigated the growth behavior of sulfur-doped n-InP layers around the dry-etched mesas as a function of various H/sub 2/S flow rates. It is found that the growth rate of the n-InP layer of the sidewall of the mesa is significantly affected by the H/sub 2/S flow rate. Consequently the regrown shape of the embedding layer is found to be exactly controlled by the H/sub 2/S flow rate. Using this technique, we have fabricated a p-substrate 1.3/spl mu/m BH laser with a pnp current-blocking structure around the dry-etched mesa and realized excellent lasing characteristics with high reliability for the first time.