Via hole modeling of PZT thin films for MMIC applications

This paper reports on the performance and effects of via holes fabricated in lead zirconate titanate (PZT) thin films intended for microwave integrated circuit applications. Square and cylindrical vias were simulated at microwave frequencies using a 3D electromagnetic simulator. The performance of via hole grounding was then compared to the edge grounding at the PZT/Pt interface. An equivalent circuit model is proposed and the models parameters are extracted. The simulation results showed that using via hole resulted in low inductance (3.848 nH) and resistance (0.017 Omega) values compared to edge grounding technique (L = 10.192 nH and R = 0.074 Omega).