Non-destructive detection of ion implant contamination: a SEMATECH/AMD study

In this paper we report on a systematic study of ion implantation equipment currently in operation or development by IC manufacturers and equipment vendors. The application of optical surface photovoltage (SPV) to both quantify and qualify bulk implant-induced contaminants in CZ P-type silicon is emphasized. We address the issue of contaminants and exemplify the use of SPV as a passive, in-line technique for assessment of the problem.