Monolithic AWG-based Discretely Tunable Laser Diode With Nanosecond Switching Speed

A novel concept for an arrayed-waveguide-grating (AWG)-based fast tunable laser is presented. It is fabricated in the InP–InGaAsP monolithic integration technology. Laser peaks have a sidemode suppression ratio of 30–40 dB. The wavelength switching speed is in the order of a few nanoseconds and switching is achieved by a 1-mA bias current. The switching between AWG channels is discrete and no laser operation takes place at wavelengths corresponding to other channels during the tuning process.