An ion implanted In/sub 0.53/Ga/sub 0.47/As HFET for optoelectronic integration

The fabrication process and device performance of an ion implanted In/sub 0.53/Ga/sub 0.47/As HFET in an optimized MSM photodetector layer structure is presented. A Si(29) ion implantation with a dose of 3/spl times/10/sup 12/ cm/sup -2/ and an energy of 90 KeV is used to create the conducting channel of the In/sub 0.53/Ga/sub 0.47/As HFET. The 1.5 /spl mu/m ion implanted In/sub 0.53/Ga/sub 0.47/As HFET exhibits a maximum extrinsic transconductance (g/sub m/) of 180 mS/mm, a cut-off frequency (f/sub T/) of 15 GHz, and a maximum frequency of oscillation (f/sub max/) of 80 GHz. The performance of the ion implanted In/sub 0.53/Ga/sub 0.47/As HFET is comparable with that of the In/sub 0.53/Ga/sub 0.47/As HFET with an MBE grown conducting channel. The reported device performance and fabrication process show that integration of an ion implanted In/sub 0.53/Ga/sub 0.47/As HFET front-end amplifier and an In/sub 0.53/Ga/sub 0.47/As MSM photodetector is promising for high-performance and low-cost long wavelength optical receivers.