P-channel, ion implanted, GaAsSb/InAlAs HIGFETs on InP for digital and microwave applications

We report the first device results of ion implanted, recessed gate, p-channel GaAsSb/InAlAs HIGFETs grown lattice matched to InP with tremendous potential for use in a complementary technology on III-V substrates. The InAlAs/GaAsSb heterostructure possesses excellent hole confinement, and this is coupled to a p-channel device process which employs ion implanted contacts and a recessed gate. This implies the GaAsSb/InAlAs p-channel HIGFET has advantages in both digital and microwave design. Close examination of the GaAsSb/InAlAs heterostructure material during process development, provides an important feedback loop which resulted improved p-channel device characteristics. Microstructural evaluation of the ohmic contacts and its effect on their electrical stability are presented. Direct current characteristics and unique photoelectric characterization results on the fabricated p-channel HIGFETs are provided. Comments on maturing GaAsSb/InAlAs HIGFETs into a self-aligned gate, submicron, complementary technology for integrated circuit applications are outlined.