The barrier height for electron injection/extraction at metal-dielectric interface

We have demonstrated that besides a polarization current there is a current related to charge injection or extraction at the metal-dielectric contact and a reverse current related to the charge trapped into the superficial traps of the dielectric and which can jump at the interface in a reverse way. An analytical expression is proposed for the OCICC and this expression contains as main parameter the height of the potential barrier at the metal-dielectric interface at the initial moment when the step voltage is applied. The value obtained for the potential barrier was 0.43 eV.