Characterization of semiconducting structures by the PWP method

The non-destructive electrical characterization of semiconducting structures mainly relies on indirect techniques. Charge information are then obtained by using an electrical model and only well modelled semiconductor materials can be accurately studied. The PWP method has already been shown to deliver measurable signals in the case of semiconducting structures. In this paper an analytical model of the signal is proposed and tested with Schottky and Metal/Insulator/Semiconductor (MIS) structures under various bias voltages.