Simulation and transient analysis of organic/inorganic CMOS inverter circuit

Finite element device level simulations were used in conjunction with SPICE modeling to design and optimize a complementary MOS inverter circuit with an organic p-type and an inorganic n-type transistor combination. The device characteristics of the p-type and the n-type transistors were generated through 2D finite element device level simulations. The drain current (I
_D
) vs. drain-source voltage (V
_D
) and the drain current (I
_D
) vs. gate voltage (V
_G
) characteristics were modeled through fitting procedures to extract the SPICE parameters. Also, the design and transient analysis of a hybrid CMOS inverter circuit modeled using these SPICE parameters is presented. The inverter works reliably within the range of supply voltage (10 V).