Temperature-Insensitive Wavelength Emission and Absorption Characteristics of GaNAsBi/GaAs DH Diodes

Temperature-insensitive wavelength electroluminescent emission and absorption characteristics are obtained from GaN
y
As
1-x-y
Bi
x
/GaAs double-heterostructure diodes. The temperature dependence of the EL peak wavelength and the absorption edge is 0.09 nm / K and 0.2 meV / K, respectively.