0.1-mW p-Si/β-FeSi2/n-Si double heterostructures light-emitting diodes operating at 1.6 μm at room temperature

Room temperature 1.6 mum p
⁺
-Si/beta-FeSi
₂
/n
⁺
-Si double heterostructures light-emitting diodes is fabricated on Si(111) substrate using molecular-beam epitaxy. The electroluminescence intensity is improved by increasing the thickness of beta-FeSi
₂
active layer and by embedding the beta-FeSi
₂
at heavily-doped Si p-n junction, which is making it possible to evaluate the emission power and quantum efficiency for the first time using optical power meter.