Characteristics of polycrystalline 3C-SiC thin films grown on thermal oxided Si wafers by single precursor hexamethyldisilane

This paper presents the growth conditions and characteristics of polycrystalline (poly) 3C-SiC thin films for micro/nano-electromechaical systems (M/ NEMS) applications. The growth of the poly 3C-SiC thin film on oxided Si wafers was accomplished by APCVD using single precursor hexamethyldisilane (HMDS: Si
2
(CH
3
)
6
). Depositions were performed under various temperatures and HMDS flow rates, which were adjusted from 1000 to 1200 °C and from 6 to 8 sccm, respectively. Moreover, the effect of the addition of H
2
was studied as a means to improve surface roughness. The thermal and mechanical properties ofpoly 3C-SiC were investigated. The optimal growth conditions for the poly 3C-SiC thin film are a deposition temperature of 1100 °C, HMDS flow rate of 8 sccm and a H
2
f1ow rate of l00 sccm.